ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,959, issued on Nov. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Non-volatile memory with current detection circuit" was invented by Abu Naser Zainuddin (Milpitas, Calif.), Jiahui Yuan (Fremont, Calif.) and Sai Gautham Thoppa (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system implemented on one or more die includes a power input line for the one or more die, a current detection circuit connected to the power input line such that the current detection circuit is configured to indicate whether current at the power input is greater than a reference current, and a control circuit connected to the power...