ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,555, issued on Nov. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Unselect word line switch bias scheme for non-volatile memory apparatus" was invented by Mohan Dunga (Santa Clara, Calif.), Sudarshan Narayanan (San Jose, Calif.) and Satoru Mayuzumi (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes word line switches coupled to word lines connected to memory cells. The word line switches are each configured to retain a switch threshold voltage and selectively connect the word lines to a common driver for supplying voltages thereto durin...