ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,559, issued on Nov. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Non-volatile memory with sub-blocks" was invented by Xiang Yang (Santa Clara, Calif.), Wei Cao (Fremont, Calif.) and Jiacen Guo (Sunnyvale, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory includes a plurality of non-volatile memory cells arranged in blocks. Each block includes multiple sub-blocks that can be independently erased and programmed. A control circuit is connected to the non-volatile memory cells. The control circuit is configured to independently erase and program sub-blocks of a same block. The control circuit is configured...