US Patent Issued to Sandisk Technologies on Nov. 11 for "Non-volatile memory with early ramp for improved performance" (California Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,568, issued on Nov. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with early ramp for improved performance" was invented by Jiacen Guo (Sunnyvale, Calif.), Jiawei Xu (San Jose, Calif.) and Zhuo Li (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "To increase performance, a non-volatile storage apparatus reduces the amount of time needed for program verify by eliminating a pause in the raising of word line voltages that has been used to allow the channels of memory cells to discharge. To compensate for the removal of the time previously used to allow the channels of memory cells to discharge wit...