US Patent Issued to Sandisk Technologies on Nov. 11 for "Non-volatile memory with dummy word line assisted pre-charge" (California Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,560, issued on Nov. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with dummy word line assisted pre-charge" was invented by Peng Zhang (San Jose, Calif.), Yanli Zhang (San Jose, Calif.), Dengtao Zhao (Los Gatos, Calif.) and Jiacen Guo (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory cells of a second sub-block are programmed by pre-charging channels of unselected memory cells connected to the selected word line, boosting the pre-charged channels of unselected memory cells and applying a program voltage to selected non-volatile memory cells connected to the selected word line. The pre-c...