US Patent Issued to Sandisk Technologies on May 6 for "Non-volatile memory with layout adaptive problematic word line detection" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,800, issued on May 6, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with layout adaptive problematic word line detection" was invented by Xuan Tian (Shanghai), Liang Li (Shanghai), Dandan Yi (Shanghai), Jojo Xing (Shanghai) and Vincent Yin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "In addition to word line related short circuits within the blocks of the array structure of a non-volatile memory device, such as NAND memory, word line related shorts can also occur in the routing for supplying the word lines of the memory blocks. Depending on the layout of the routing, some shorts for the word lines ass...