US Patent Issued to Sandisk Technologies on May 27 for "Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same" (California Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,502, issued on May 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same" was invented by Ramy Nashed Bassely Said (San Jose, Calif.), Adarsh Rajashekhar (Santa Clara, Calif.), Senaka Kanakamedala (San Jose, Calif.) and Raghuveer S. Makala (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure l...