ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,020, issued on May 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including a dummy word line with tapered corner and method of making the same" was invented by Nobuyuki Fujimura (Yokkaichi, Japan), Shunsuke Takuma (Yokkaichi, Japan), Takashi Kudo (Yokkaichi, Japan), Satoshi Shimizu (Yokkaichi, Japan) and Zhixin Cui (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first alternating stack of first insulating layers and first electrically conductive layers located over a substrate, a memory opening vertically extending through the first alternating stack and...