US Patent Issued to Sandisk Technologies on May 13 for "Secure wear levelling of non-volatile memory based on Galois field circuit" (California, Minnesota Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,295, issued on May 13, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Secure wear levelling of non-volatile memory based on Galois field circuit" was invented by Martin Hassner (Mountain View, Calif.) and Mark Branstad (Rochester, Minn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Wear levelling techniques based on use of a Galois field for the logical to physical translation of data addresses for a non-volatile memory, such as an MRAM-based memory, are presented. This not only provides a wear levelling technique to extend memory life, but also adds an additional layer of security to the stored memory data. More specifically, the f...