ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,154, issued on March 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Three-dimensional memory device with orthogonal memory opening and support opening arrays and method of making thereof" was invented by Akihiro Tobioka (Nagoya, Japan) and Yusuke Tanaka (Brussels).
According to the abstract* released by the U.S. Patent & Trademark Office: "An alternating stack of insulating layers and spacer material layers is formed over a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings and support openings are formed through the alternating stack. The memory openings are arranged in a fi...