US Patent Issued to Sandisk Technologies on March 18 for "Three-dimensional memory device including vertical stack of tubular graded silicon oxynitride portions" (California Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,242, issued on March 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including vertical stack of tubular graded silicon oxynitride portions" was invented by Adarsh Rajashekhar (Santa Clara, Calif.), Raghuveer S. Makala (Campbell, Calif.) and Koichi Matsuno (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconduct...