US Patent Issued to Sandisk Technologies on March 18 for "Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,542, issued on March 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same" was invented by Kyohei Nabesaka (Yokkaichi, Japan) and Teruo Okina (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory die includes an alternating stack of insulating layers and electrically conductive layers, a semiconductor material layer located over the alternating stack, a dielectric spacer layer located over the semiconductor material layer, a memory opening vertically extending through the alternating stack, through ...