US Patent Issued to SanDisk Technologies on March 11 for "CELSRC voltage separation between SLC and XLC for SLC program average ICC reduction" (California Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,378, issued on March 11, was assigned to SanDisk Technologies LLC.

"CELSRC voltage separation between SLC and XLC for SLC program average ICC reduction" was invented by Yu-Chung Lien (San Jose, Calif.), Deepanshu Dutta (Fremont, Calif.), Sarath Puthenthermadam (San Jose, Calif.) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile semiconductor memory device, described herein, comprises a bit line, a source line, a memory string comprising a plurality of memory cells connected in series between the source line and the bit line, and control circuitry coupled to the plurality of memory cells, the source line,...