ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,710, issued on June 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with finned support pillar structures and method of forming the same" was invented by Jixin Yu (Milpitas, Calif.), Johann Alsmeier (San Jose, Calif.) and Koichi Matsuno (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory opening fill structures including a respective vertical semiconductor channel and a respective memory film, and support pillar structures including a resp...