US Patent Issued to Sandisk Technologies on June 3 for "Method of making a multi-tier memory device with rounded joint structures" (Japanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,150, issued on June 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Method of making a multi-tier memory device with rounded joint structures" was invented by Tsutomu Imai (Yokkaichi, Japan), Nao Nagase (Yokkaichi, Japan), Chiko Kudo (Yokkaichi, Japan) and Sadao Fukuno (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sacrificial memory opening fill structure for a multi-tier memory device may include a semiconductor fill material portion a metallic fill material portion to enhance control of a vertical cross-sectional profile of an inter-tier memory opening. Multiple inter-tier dielectric layers may be employed to ...