ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,537, issued on June 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Three-dimensional memory device containing epitaxial pedestals and top source contact" was invented by Adarsh Rajashekhar (Santa Clara, Calif.), Raghuveer S. Makala (Campbell, Calif.), Masanori Tsutsumi (Yokkaichi, Japan) and Fei Zhou (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a doped single crystalline semiconductor material layer, a metal or metal alloy source contact layer located over a back side of the doped single crystalline semiconductor material layer, a dielectric isolation layer located over a fro...