US Patent Issued to Sandisk Technologies on June 10 for "Fast self-referenced read of programmable resistance memory cells" (California, Idaho Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,040, issued on June 10, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Fast self-referenced read of programmable resistance memory cells" was invented by Dimitri Houssameddine (Sunnyvale, Calif.), Michael Nicolas Albert Tran (San Jose, Calif.), Ward Parkinson (Boise, Idaho) and Michael Grobis (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology is disclosed herein for reading programmable resistance memory cells. A first (faster) self-referenced read (SRR) of a group of memory cells is performed and if successful the read is complete. However, if the first SRR fails then a second (slower or nominal) SRR is perf...