ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,955, issued on July 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with high contact via density and methods of forming the same" was invented by Tomohiro Kubo (Yokkaichi, Japan), Hirofumi Tokita (Yokkaichi, Japan), Shiqian Shao (Fremont, Calif.) and Fumiaki Toyama (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a first three-dimensional memory array located in a first memory array region, and a second three-dimensional memory array located in a second memory arra...