US Patent Issued to Sandisk Technologies on July 8 for "Three-dimensional memory device containing plural metal oxide blocking dielectric layers and method of making thereof" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,944, issued on July 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing plural metal oxide blocking dielectric layers and method of making thereof" was invented by Naohiro Hosoda (Yokkaichi, Japan) and Masanori Tsutsumi (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, where each of the memory opening fill structure...