US Patent Issued to Sandisk Technologies on July 8 for "Non-volatile memory with erase depth detection and adaptive adjustment to programming" (California Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,683, issued on July 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with erase depth detection and adaptive adjustment to programming" was invented by Huiwen Xu (Cupertino, Calif.), Deepanshu Dutta (Fremont, Calif.) and Bo Lei (San Ramon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory system detects an indication of erase depth of a population of memory cells and adjusts the programming process for the memory cells based on the detected erase depth."

The patent was filed on July 24, 2023, under Application No. 18/357,412.

*For further information, including images, charts and tables...