US Patent Issued to Sandisk Technologies on July 8 for "Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the same" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,704, issued on July 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the same" was invented by Kouta Onogi (Yokkaichi, Japan), Kazutaka Yoshizawa (Yokkaichi, Japan), Hokuto Kodate (Yokkaichi, Japan), Mitsuhiro Togo (Yokkaichi, Japan) and Takahito Fujita (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a first active region and a second active region separated by a semiconductor channel, a gate stack structure including a gate dielectric and a gate electrode overlying t...