US Patent Issued to SANDISK TECHNOLOGIES on July 8 for "Active current consumption save mode for non-volatile memory using fast programming" (Chinese, American Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,704, issued on July 8, was assigned to SANDISK TECHNOLOGIES INC. (Milpitas, Calif.).

"Active current consumption save mode for non-volatile memory using fast programming" was invented by Ke Zhang (Shanghai), Linnan Chen (Shanghai), Liang Li (Shanghai), Minna Li (Shanghai), Chin-Yi Chen (San Jose, Calif.), Xiaojia Jia (San Jose, Calif.), Muhammad Masuduzzaman (Chandler, Ariz.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines and disposed in memory holes coupled to bit lines. A control means successively...