US Patent Issued to Sandisk Technologies on July 29 for "SOT MRAM including MTJ and selector located on opposite sides of SOT layer and method of making the same" (California Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,498, issued on July 29, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"SOT MRAM including MTJ and selector located on opposite sides of SOT layer and method of making the same" was invented by Jeffrey Lille (Sunnyvale, Calif.) and Nathan Franklin (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A spin-orbit-torque (SOT) memory cell includes a first electrode embedded in dielectric material layers overlying a substrate; a magnetic-tunnel-junction-containing (MTJ-containing) pillar structure contacting a top surface of the first electrode and including a pinned layer and a free layer that overlies the pinned layer; a sp...