US Patent Issued to Sandisk Technologies on July 15 for "Memory device containing composition-controlled ferroelectric memory elements and method of making the same" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,905, issued on July 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Memory device containing composition-controlled ferroelectric memory elements and method of making the same" was invented by Kartik Sondhi (Milpitas, Calif.), Rahul Sharangpani (Fremont, Calif.), Raghuveer S. Makala (Campbell, Calif.), Tiffany Santos (Palo Alto, Calif.), Fei Zhou (San Jose, Calif.), Joyeeta Nag (San Jose, Calif.), Bhagwati Prasad (San Jose, Calif.) and Adarsh Rajashekhar (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes an alternating stack of insulating layers and electrically conductive la...