US Patent Issued to Sandisk Technologies on July 1 for "Three-dimensional memory device with source line isolation and method of making the same" (California Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,779, issued on July 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with source line isolation and method of making the same" was invented by Ramy Nashed Bassely Said (San Jose, Calif.), Jiahui Yuan (San Francisco) and Lito De La Rama (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a horizontal source layer which is laterally separated into laterally isolated portions located in adjacent memory blocks by a dielectric backside trench fill structure or a source isolation dielectric structure."

The patent was filed on Sept. 23, 2022, under Application No. 17/934...