US Patent Issued to SANDISK TECHNOLOGIES on Jan. 28 for "Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling" (California Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,535, issued on Jan. 28, was assigned to SANDISK TECHNOLOGIES LLC (Addison, Texas).

"Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling" was invented by Alan Kalitsov (San Jose, Calif.), Derek Stewart (Livermore, Calif.), Ananth Kaushik (Santa Clara, Calif.) and Gerardo Bertero (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferroma...