US Patent Issued to Sandisk Technologies on Jan. 20 for "Three-dimensional memory device containing isolation structures and methods for forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,473, issued on Jan. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing isolation structures and methods for forming the same" was invented by Takaaki Iwai (Yokkaichi, Japan), Kazushi Komeda (Yokkaichi, Japan) and Zhen Chen (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and composite layers, each of the composite layers includes a plurality of electrically conductive word line strips and a plurality of dielectric isolation structures, and each of the insulating layers has an areal overlap with each ...