US Patent Issued to Sandisk Technologies on Jan. 20 for "Temperature compensation for pre-charge spike in multi-pass programming" (California Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,530,142, issued on Jan. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Temperature compensation for pre-charge spike in multi-pass programming" was invented by Jiacen Guo (Cupertino, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is related to a programming technique for a memory device that includes a plurality of memory cells arranged in a plurality of word lines. An operating temperature of the memory device is determined. A spike pre-charge voltage is selected based on the operating temperature of the memory device. A first word line and a second word line are pro...