US Patent Issued to Sandisk Technologies on Jan. 20 for "Memory device with through-stack contact via structures which contact plural stacks and method of making the same" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,475, issued on Jan. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Memory device with through-stack contact via structures which contact plural stacks and method of making the same" was invented by Hiroyuki Ogawa (Nagoya, Japan) and Masanori Tsutsumi (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first-tier structure including a first first-tier alternating stack and a second first-tier alternating stack, a second-tier structure overlying or underlying the first-tier structure and including a first second-tier alternating stack and a second second-tier alternating stack that are latera...