US Patent Issued to Sandisk Technologies on Jan. 13 for "High aspect ratio via fill process employing selective metal deposition and structures formed by the same" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,487, issued on Jan. 13, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"High aspect ratio via fill process employing selective metal deposition and structures formed by the same" was invented by Shingo Totani (Yokkaichi, Japan), Kensuke Ishikawa (Yokkaichi, Japan) and Fumitaka Amano (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes forming a semiconductor device over a substrate, forming a combination of a connection-level dielectric layer and a connection-level metal interconnect structure over the semiconductor device, where the connection-level metal interconnect...