ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,300, issued on Jan. 13, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Energy efficient fast read in a memory device" was invented by Abhijith Prakash (Milpitas, Calif.), Xiang Yang (Santa Clara, Calif.) and Wei Cao (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes circuitry which is configured to sense threshold voltages of the memory cells of a selected word line of the plurality of word lines in a sensing operation. During the sensing operation, the circuitry, in a first sensing process, senses the memory cells of the selected word line using both a fast read technique and a positive sensin...