US Patent Issued to Sandisk Technologies on Feb. 3 for "Cross-point magnetoresistive memory array containing selector rails and method of making the same" (California Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,508, issued on Feb. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Cross-point magnetoresistive memory array containing selector rails and method of making the same" was invented by Jordan Katine (Mountain View, Calif.) and Lei Wan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device includes forming vertical stacks each including a respective first electrically conductive line and a respective selector rail over a substrate, such that the vertical stacks laterally extend along a first horizontal direction and are laterally spaced apart from each other along a second horizontal direct...