US Patent Issued to Sandisk Technologies on Feb. 18 for "Word line layer dependent stress and screen voltage" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,344, issued on Feb. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Word line layer dependent stress and screen voltage" was invented by Yidan Liu (Shanghai), Chao Xu (Shanghai) and Liang Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology is disclosed for testing a 3D memory structure. The 3D memory structure has blocks with layers of word lines. Each word line is connected to control gates of NAND memory cells. The 3D memory structure may be tested while concurrently applying a set of layer dependent voltages to a corresponding set of word lines. The magnitude of each layer dependent voltage may depend on whic...