US Patent Issued to Sandisk Technologies on Feb. 10 for "Three-dimensional memory device including a mid-stack source layer and methods for forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,328, issued on Feb. 10, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including a mid-stack source layer and methods for forming the same" was invented by Naohiro Hosoda (Yokkaichi, Japan), Kazuki Isozumi (Yokkaichi, Japan) and Masanori Tsutsumi (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers, a source layer overlying the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying t...