ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,626, issued on Feb. 10, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Positive sensing in low power operation mode in a memory device" was invented by Abhijith Prakash (Milpitas, Calif.), Xiang Yang (Santa Clara, Calif.) and Wei Cao (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes sensing circuitry that senses data in the memory cells of a selected word line. If the memory device is in the first operating mode, the sensing circuitry senses the selected word line with a first sensing process that includes applying a first voltage to a source side of at least one NAND string and ramping at lea...