US Patent Issued to Sandisk Technologies on Dec. 9 for "Word line-dependent word line and channel read setup time in first read state of non-volatile memory" (California Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,245, issued on Dec. 9, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Word line-dependent word line and channel read setup time in first read state of non-volatile memory" was invented by Dong-il Moon (San Jose, Calif.), Erika Penzo (San Jose, Calif.) and Henry Chin (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines and disposed in memory holes each comprising a channel. The memory cells retain a threshold voltage and are operable in one of a first read condition in which a word line voltage of the word lin...