US Patent Issued to Sandisk Technologies on Dec. 9 for "Generation of quick pass write biases in a memory device" (California Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,253, issued on Dec. 9, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Generation of quick pass write biases in a memory device" was invented by Abhijith Prakash (Milpitas, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a quick pass write (QPW) voltage source and a transistor that can control the supply of a first QPW bias voltage to a plurality of bit lines. Control circuitry programs the memory cells of a selected word line in a plurality of program loops. For each memory cell in the selected word line, the control circuitry determines if the memory cell is within...