US Patent Issued to Sandisk Technologies on Dec. 9 for "Adaptive erase scheme for a memory device" (California Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,256, issued on Dec. 9, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Adaptive erase scheme for a memory device" was invented by Huiwen Xu (Cupertino, Calif.) and Bo Lei (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The adaptive erase scheme includes erasing the memory cells of a selected memory block in at least one erase loop. During the at least one erase loop, simultaneously, an erase voltage is applied to a plurality of channels in the selected memory block, a first bias voltage is applied to the plurality of word lines of the first sub-block, and a second bias voltage is applied to the plurality of word lines ...