ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,167, issued on Dec. 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"In-place refresh techniques for non-volatile memory devices" was invented by Hyo Jung Son (San Jose, Calif.), Wei Cao (Fremont, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a memory block that includes an array of memory cells that are arranged in a plurality of word lines. The memory device also includes circuitry for programming the memory cells of the memory block. The circuitry is configured to program the memory cells of the memory block to a single bit per memory cell storage format tha...