US Patent Issued to Sandisk Technologies on Dec. 30 for "Artificial select gate cut for NAND" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,156, issued on Dec. 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Artificial select gate cut for NAND" was invented by Yuki Kuniyoshi (Fujisawa, Japan), Hardwell Chibvongodze (Hiratsuka, Japan), Alvin Joshua (Fujisawa, Japan), Akira Hanasaka (Fujisawa, Japan) and Akitomo Nakayama (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology is for managing non-volatile memory such as NAND memory. A memory system that programs the threshold voltages (Vt) of transistors on NAND strings to enable selection of sub-blocks without physically separate select lines in a block. A first set of one or more transistors on a NAN...