US Patent Issued to Sandisk Technologies on Dec. 23 for "Plane and block location dependent voltage biases in NAND memory" (California Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,885, issued on Dec. 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Plane and block location dependent voltage biases in NAND memory" was invented by Abhijith Prakash (Milpitas, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a chip with at least one voltage pump and a plurality of planes. The planes have arrays of memory cells that can be programmed and erased. At least some of the planes are at different distances from the at least one voltage pump. The memory device further includes control circuitry that is configured to program and erase the memory cells. T...