US Patent Issued to Sandisk Technologies on Dec. 2 for "Negative word line enabled pre-boosting strategy to improve NAND program performance" (California Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,846, issued on Dec. 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Negative word line enabled pre-boosting strategy to improve NAND program performance" was invented by Wei Cao (Fremont, Calif.), Xiang Yang (Santa Clara, Calif.) and Peng Zhang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "To improve programming performance in NAND memory, while maintaining programming accuracy and reducing program disturb, the channel pre-charge phase before a programming pulse can be eliminated. Instead, a read recovery phase after the program verify directly discharges a selected word line from the verify voltage to a negative ...