US Patent Issued to Sandisk Technologies on Aug. 5 for "Three-dimensional memory device and method of making thereof using double pitch word line formation" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,638, issued on Aug. 5, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device and method of making thereof using double pitch word line formation" was invented by Naoki Takeguchi (Nagoya, Japan), Masanori Tsutsumi (Yokkaichi, Japan), Seiji Shimabukuro (Yokkaichi, Japan) and Tatsuya Hinoue (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical repetition of multiple instances of a unit layer stack is formed over a substrate. The unit layer stack includes an insulating layer and a sacrificial material layer. Lateral recesses are formed by removing the sacrificial material layers selective to ...