US Patent Issued to Sandisk Technologies on Aug. 12 for "Fast direct look ahead read mode in a memory device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,782, issued on Aug. 12, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Fast direct look ahead read mode in a memory device" was invented by Xuan Tian (Shanghai) and Liang Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology is disclosed herein compensating for neighbor memory cell interference on a target memory cell when reading the target memory cell. The voltage that is applied to the bit line associated with the target memory cell may have a magnitude that depends on the data state of the neighbor memory cell. The magnitude of the voltage on the bit line may impact the amount of drain-induced barrier lowering (D...