US Patent Issued to Sandisk Technologies on April 29 for "Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof" (California Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,889, issued on April 29, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof" was invented by Kartik Sondhi (Milpitas, Calif.), Adarsh Rajashekhar (Santa Clara, Calif.), Fei Zhou (San Jose, Calif.) and Raghuveer S. Makala (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening extending vertically through the alternating stack and including laterally-protruding portions at leve...