US Patent Issued to Sandisk Technologies on April 29 for "Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making the same" (California Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,887, issued on April 29, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making the same" was invented by Peter Rabkin (Cupertino, Calif.) and Masaaki Higashitani (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an alternating stack of insulating layers and control gate layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure containing a memory film and a vertical semiconductor channel located within the memory opening. The memory...