US Patent Issued to Sandisk Technologies on April 29 for "Three-dimensional memory device containing deformation resistant trench fill structure and methods of making the same" (California Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,755, issued on April 29, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing deformation resistant trench fill structure and methods of making the same" was invented by Koichi Matsuno (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a dielectric moat fill structure that includes a nested structure including, from outside to inside, an outer dielectric liner having a first Young's modulus, an outer material layer having a second Young's modulus greater than the first Young...