US Patent Issued to Sandisk Technologies on April 29 for "Non-volatile memory with sub-planes having individually biasable source lines" (California Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,586, issued on April 29, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with sub-planes having individually biasable source lines" was invented by Ramy Nashed Bassely Said (Dublin, Calif.), Jiahui Yuan (Fremont, Calif.) and Lito De La Rama (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "To reduce data disturbs and lower current requirements of a 3D NAND memory die, a multi-block plane of non-volatile memory cells has its source line separated into multiple source line regions by introduction of isolation trenches. The plane structure for the NAND memory is maintained, but is broken into multi-block...