US Patent Issued to Sandisk Technologies on April 22 for "Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same" (California Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,296, issued on April 22, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same" was invented by Tiffany Santos (San Jose, Calif.) and Neil Smith (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction includes a reference layer having a fixed magnetization direction, a free l...