US Patent Issued to Sandisk Technologies on April 22 for "Array dependent voltage compensation in a memory device" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,324, issued on April 22, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Array dependent voltage compensation in a memory device" was invented by Ke Zhang (Shanghai), Liang Li (Shanghai) and Ming Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device that includes a die with a CMOS wafer with programming and erasing circuitry. The die also includes a plurality of array wafers coupled with and in electrical communication with the CMOS wafer and having different programming and erasing efficiencies. Each of the array wafers includes memory blocks with memory cells. The control circuitry of the CMOS wafer is confi...